DMD1012 Datasheet, PDF (1/2 Pages) Seme LAB – ROHS COMPLIANT METAL GATE RF SILICON FET

TetraFET
DMD1012
DMD1012-A
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C
(2 pls)
1
HD
B
2
3
5
4
E
(4 pls)
F
I
G
(typ)
P
(2 pls) A
PIN 1
PIN 3
PIN 5
NM
O
D1
SOURCE (COMMON)
DRAIN 2
GATE 1
DIM Millimetres Tol.
A 15.24 0.50
B 10.80 0.13
C
45°
5°
D
9.78
0.13
E
8.38
0.13
F 27.94 0.13
G 1.52R 0.13
H 10.16 0.15
I
21.84 0.23
J
0.10
0.02
K
1.96
0.13
M
1.02
0.13
N
4.45
0.38
O 34.04 0.13
P 1.63R 0.13
JK
PIN 2
PIN 4
DRAIN 1
GATE 2
Inches
0.600
0.425
45°
0.385
0.330
1.100
0.060R
0.400
0.860
0.004
0.077
0.040
0.175
1.340
0.064R
Tol.
0.020
0.005
5°
0.005
0.005
0.005
0.005
0.006
0.009
0.001
0.005
0.005
0.015
0.005
0.005
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
100W – 28V – 500MHz
PUSH–PULL
FEATURES
• SUITABLE FOR BROAD BAND APPLICATIONS
• SIMPLE BIAS CIRCUITS
• ULTRA-LOW THERMAL RESISTANCE
• BeO FREE
• LOW Crss
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
500W (290W -A Version)
BV_DSS
Drain – Source Breakdown Voltage *
70V
BV_GSS
Gate – Source Breakdown Voltage*
±20V
I_D(sat)
Drain Current*
15A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
* Per Side
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 7346
Issue 1