DMD1006 Datasheet, PDF (1/5 Pages) Seme LAB – ROHS COMPLIANT METAL GATE RF SILICON FET

TetraFET
DMD1006
DMD1006-A
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
D
2
1
A
3
G( 2 pls)
F
M
K
J
I
D2
PIN 1 SOURCE
PIN 3 GATE
DIM Millimetres Tol.
A
19.43
0.13
B
9.78
0.13
C
9.40
0.10
D
45°
5°
E
1.63R
0.13
F
27.94
0.13
G
12.70
0.13
H
1.57
0.13
I
34.04
0.13
J
1.01
0.13
K
19.94
0.25
L
0.10
0.25
M
4.24
0.25
E
( 2 pls)
BC
H
L
PIN 2 DRAIN
Inches
0.765
0.385
0.370
45°
0.064R
1.100
0.500
0.062
1.340
0.040
0.785
0.004
0.167
Tol.
0.005
0.005
0.004
5°
0.005
0.005
0.005
0.005
0.005
0.005
0.009
0.002
0.01
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
150W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SUITABLE FOR BROAD BAND APPLICATIONS
• SIMPLE BIAS CIRCUITS
• ULTRA-LOW THERMAL RESISTANCE
• BeO FREE
• LOW C_rss
• HIGH GAIN - 15 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
438W (219W -A Version)
BV_DSS
Drain – Source Breakdown Voltage
70V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
30A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 6755
Issue 2