D5013UK Datasheet, PDF (1/2 Pages) Seme LAB – ROHS COMPLIANT METAL GATE RF SILICON FET

TetraFET
D5013UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C
2
1
A
3
F
(2 pls)
H
J
N
(typ)
B
D
(2 pls)
MI
PIN 1
PIN 3
SOURCE
GATE
E
KG
DP
PIN 2 DRAIN
DIM mm
A 16.51
B
6.35
C
45°
D
3.30
E 18.92
F
1.52
G
2.16
H 14.22
I
1.52
J
6.35
K
0.13
M
5.08
N 1.27 x 45°
Tol. Inches Tol.
0.25 0.650 0.010
0.13 0.250 0.005
5°
45°
5°
0.13 0.130 0.005
0.08 0.745 0.003
0.13 0.060 0.005
0.13 0.085 0.005
0.08 0.560 0.003
0.13 0.060 0.005
0.13 0.250 0.005
0.03 0.005 0.001
0.51 0.200 0.020
0.13 0.050 x 45° 0.005
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 50V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C_rss
• USEFUL P_O AT 1GHz
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
50W
BV_DSS
Drain – Source Breakdown Voltage
125V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
3A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 3918
Issue 1