D5011UK Datasheet, PDF (1/6 Pages) Seme LAB – METAL GATE RF SILICON FET

TetraFET
D5011UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
8
D
7
6
5
1
2
CB
3
4
GOLD METALLISED
N
MULTI-PURPOSE SILICON
DMOS RF FET
P
10W – 50V – 500MHz
SINGLE ENDED
H
K
FEATURES
L
M
J
E
F
G
SO8 PACKAGE
PIN 1 – SOURCE
PIN 5 – SOURCE
PIN 2 – DRAIN
PIN 6 – GATE
PIN 3 – DRAIN
PIN 7 – GATE
PIN 4 – SOURCE
PIN 8 – SOURCE
Dim. mm
A
4.06
B
5.08
C
1.27
D
0.51
E
3.56
F
4.06
G
1.65
H
0.76
J
0.51
1.02
K
45°
L
0°
7°
M
0.20
N
2.18
P
4.57
Tol.
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
±0.08
Max.
±0.08
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
0.030
0.020
0.040
45°
0°
7°
0.008
0.086
0.180
Tol.
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
±0.003
Max.
±0.003
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C_rss
• USEFUL P_O AT 1GHz
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
30W
BV_DSS
Drain – Source Breakdown Voltage
125V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
3A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
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Document Number 8198
Issue 1