D5007UK Datasheet, PDF (1/2 Pages) Seme LAB – GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W - 50V - 175MHz SINGLE ENDED

TetraFET
D5007UK
MECHANICAL DATA
A
B
1
2
4
3
M
G
C
D
E
F
HK
PIN 1
PIN 3
SOURCE
SOURCE
IJ
PIN 2
PIN 4
DRAIN
GATE
DIM mm
A 28.83
B 21.97
C
45°
D
6.86
E 3.43 Dia.
F
5.84
G 13.97 Dia.
H
6.60
I
0.13
J
4.06
K
2.54
M
6.35
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
1.135
0.865
45°
0.270
0.135 Dia.
0.230
0.550 Dia.
0.260
0.005
0.16
0.100
1.10
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.005
REF
0.001
0.01
0.005
0.02
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
150W – 50V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C_rss
• SIMPLE BIAS CIRCUITS
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
350W
BV_DSS
Drain – Source Breakdown Voltage
125V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
21A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Document Number 5287
Issue 2