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D2232UK Datasheet, PDF (1/2 Pages) Seme LAB – METAL GATE RF SILICON FET
TetraFET
D2232UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
2 PL.
0.47
1.65
2 PL.
4
3
3.00
2 PL.
2.07
2 PL.
0.381
2
1
0.47
2 PL.
0.10
TYP.
5.50 ± 0.15
1.27 ± 0.05
2 PL.
0.80
4 PL.
4.90 ± 0.15
0.3 R.
4 PL.
5
1.27
6
1.27
7
1.27
8
0.10 R.
TYP.
6.50 ±
0.15
0.10
TYP.
2.313
± 0.2
0.360
± 0.005
0.508
F-0127 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 7.2V – 850MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
Ceramic Material: Alumina.
Parts can also be supplied with AlN or BeO for
improved thermal resistance.
Contact Semelab for details.
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
29W
BVDSS
Drain – Source Breakdown Voltage
40V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
8A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 5/99