D2218UK Datasheet, PDF (1/2 Pages) Seme LAB – METAL GATE RF SILICON FET

MECHANICAL DATA
C
2
A
B
3
D
( 2 p ls )
E
G
H
PIN 1
PIN 3
SOURCE
GATE
1
F
DP
PIN 2 DRAIN
DIM mm
A 16.51
B
6.35
C
45°
D
1.52
E
6.35
F
0.13
G
3.56
H
0.64
Tol.
0.25
0.13
5°
0.13
0.13
0.03
0.51
0.13
Inches
0.650
0.250
45°
0.060
0.250
0.005
0.140
0.024
Tol.
0.010
0.005
5°
0.005
0.005
0.001
0.020
0.005
TetraFET
D2218UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 12.5V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from DC to 1 GHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
70W
BV_DSS
Drain – Source Breakdown Voltage
40V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
16A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
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