D2018UK Datasheet, PDF (1/2 Pages) Seme LAB – ROHS COMPLIANT METAL GATE RF SILICON FET

TetraFET
D2018UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C
A
B
!
D
( 2 p ls )
E
G
H
PIN 1
PIN 3
SOURCE
GATE

F
DP
PIN 2 DRAIN
DIM mm
A 16.51
B
6.35
C
45°
D
1.52
E
6.35
F
0.13
G
3.56
H
0.64
Tol. Inches Tol.
0.25 0.650 0.010
0.13 0.250 0.005
5°
45°
5°
0.13 0.060 0.005
0.13 0.250 0.005
0.03 0.005 0.001
0.51 0.140 0.020
0.13 0.024 0.005
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 28V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
• LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from 50 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
42W
BV_DSS
Drain – Source Breakdown Voltage
65V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
4A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Document Number 3039
Issue 1