D2017UK Datasheet, PDF (1/2 Pages) Seme LAB – METAL GATE RF SILICON FET

MECHANICAL DATA
C
A
B
!
D
( 2 p ls )
E
G
H
PIN 1
PIN 3
SOURCE
GATE

F
DP
PIN 2 DRAIN
DIM mm
A 16.51
B
6.35
C
45°
D
1.52
E
6.35
F
0.13
G
3.56
H
0.64
Tol. Inches Tol.
0.25 0.650 0.010
0.13 0.250 0.005
5°
45°
5°
0.13 0.060 0.005
0.13 0.250 0.005
0.03 0.005 0.001
0.51 0.140 0.020
0.13 0.024 0.005
TetraFET
D2017UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
• LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from DC to 1 GHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
29W
BV_DSS
Drain – Source Breakdown Voltage
65V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
2A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 3040
Issue 1