D2016UK Datasheet, PDF (1/2 Pages) Seme LAB – ROHS COMPLIANT METAL GATE RF SILICON FET

TetraFET
D2016UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
B
(2 pls)
E
A
C2
3
1
5
4
G (4 pls)
F
K
D
PIN 1
PIN 3
PIN 5
HJ
I
DK
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
PIN 4
MN
DRAIN 1
GATE 2
DIM mm
A
6.45
B 1.65R
C
45°
D 16.51
E
6.47
F 18.41
G
1.52
H
4.82
I
24.76
J
1.52
K 0.81R
M
0.13
N
2.16
Tol. Inches Tol.
0.13 0.254 0.005
0.13 0.065R 0.005
5°
45°
5°
0.76 0.650 0.03
0.13 0.255 0.005
0.13 0.725 0.005
0.13 0.060 0.005
0.25 0.190 0.010
0.13 0.975 0.005
0.13 0.060 0.005
0.13 0.032R 0.005
0.02 0.005 0.001
0.13 0.085 0.005
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
30W – 28V – 1GHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
117W
BV_DSS
Drain – Source Breakdown Voltage *
65V
BV_GSS
Gate – Source Breakdown Voltage *
±20V
I_D(sat)
Drain Current *
6A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
* Per Side
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
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Document Number 3143
Issue 1