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D2008UK Datasheet, PDF (1/2 Pages) Seme LAB – METAL GATE RF SILICON FET | |||
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TetraFET
D2008UK
METAL GATE RF SILICON FET
MECHANICAL DATA
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
4.19 (0.165)
4.95 (0.195)
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W â 28V â 400MHz
12.70
(0.500)
min.
0.89 max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
SINGLE ENDED
FEATURES
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
5.08 (0.200)
typ.
⢠SIMPLIFIED AMPLIFIER DESIGN
⢠SUITABLE FOR BROAD BAND
APPLICATIONS
2
1
3
2.54
(0.100)
⢠LOW Crss
⢠SIMPLE BIAS CIRCUITS
⢠LOW NOISE
⢠HIGH GAIN â 13 dB MINIMUM
45Ë
TO-39 PACKAGE
PIN1 â DRAIN
PIN2 â GATE PIN3 â SOURCE
APPLICATIONS
⢠VHF COMMUNICATIONS
from DC to 400MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
29W
BVDSS
Drain â Source Breakdown Voltage
65V
BVGSS
Gate â Source Breakdown Voltage
±20V
ID(sat)
Drain Current
2A
Tstg
Storage Temperature
â65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/97
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