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D2007UK Datasheet, PDF (1/2 Pages) Seme LAB – METAL GATE RF SILICON FET | |||
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MECHANICAL DATA
A
B
C
1
4
M
2
D
3
E
F
G
HK
PIN 1
PIN 3
SOURCE
SOURCE
IJ
DA
PIN 2 DRAIN
PIN 4 GATE
TetraFET
D2007UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W â 28V â 400MHz
SINGLE ENDED
FEATURES
⢠SIMPLIFIED AMPLIFIER DESIGN
⢠SUITABLE FOR BROAD BAND APPLICATIONS
⢠LOW Crss
⢠SIMPLE BIAS CIRCUITS
⢠LOW NOISE
⢠HIGH GAIN â 13 dB MINIMUM
APPLICATIONS
⢠VHF/UHF COMMUNICATIONS
from DC to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
29W
BVDSS
Drain â Source Breakdown Voltage
65V
BVGSS
Gate â Source Breakdown Voltage
±20V
ID(sat)
Drain Current
2A
Tstg
Storage Temperature
â65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
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