D1260UK Datasheet, PDF (1/2 Pages) Seme LAB – METAL GATE RF SILICON FET

TetraFET
D1260UK
METAL GATE RF SILICON FET
MECHANICAL DATA
D
(2 pls)
C
E
B
1
2
3
A
G
5
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
60W – 12.5V – 175MHz
SINGLE ENDED
PIN 1
PIN 3
PIN 5
H
I
FM
K
DT
SOURCE (COMMON) PIN 2
SOURCE (COMMON) PIN 4
DRAIN
JN
GATE
SOURCE (COMMON)
DIM mm
A 6.35 DIA
B 3.17 DIA
C 18.41
D
5.46
E
5.21
F
7.62
G 21.59
H
3.94
I
12.70
J
0.13
K 24.76
M
2.59
N
4.06
Tol.
0.13
0.13
0.25
0.13
0.13
MAX
0.38
0.13
0.13
0.03
0.13
0.13
0.25
Inches
0.250 DIA
0.125 DIA
0.725
0.215
0.205
0.300
0.850
0.155
0.500
0.005
0.975
0.102
0.160
Tol.
0.005
0.005
0.010
0.005
0.005
MAX
0.015
0.005
0.005
0.001
0.005
0.005
0.010
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
175W
BV_DSS
Drain – Source Breakdown Voltage
40V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
40A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 9/95