D1221UK Datasheet, PDF (1/4 Pages) Seme LAB – GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 12.5V - 175MHz SINGLE ENDED

MECHANICAL DATA
C
1
2
4
A
3
B
PIN 1
PIN 3
DRAIN
GATE
D
DW
PIN 2
PIN 4
SOURCE
SOURCE
DIM mm
A 26.16
B
5.72
C
45°
D
7.11
E
0.13
F
1.52
G
0.43
H
7.67
Tol.
0.38
0.13
5°
0.13
0.03
0.13
0.20
REF
Inches
1.030
0.225
45°
0.280
0.005
0.055
0.060
0.120
Tol.
0.015
0.005
5°
0.005
0.001
0.005
0.008
REF
TetraFET
D1221UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 12.5V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
50W
BV_DSS
Drain – Source Breakdown Voltage
40V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
10A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Document Number 5316
Issue 1