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D1218UK Datasheet, PDF (1/2 Pages) Seme LAB – METAL GATE RF SILICON FET
TetraFET
D1218UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B
A
E
C
(2 pls)
K
12 34
FG
87 65
J
Typ .
D
M
Q
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
60W – 12.5V – 500MHz
PUSH–PULL
FEATURES
PIN 1
PIN 3
PIN 5
PIN 7
PI
N
OH
DD
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
SOURCE (COMMON) PIN 6
GATE 1
PIN 8
DRAIN 1
SOURCE (COMMON)
GATE 2
SOURCE (COMMON)
DIM mm
A
9.14
B 12.70
C
45°
D
6.86
E
0.76
F
9.78
G 19.05
H
4.19
I
3.17
J 1.52R
K 1.65R
M 16.51
N 22.86
O
0.13
P
6.35
Q 10.77
Tol. Inches Tol.
0.13 0.360 0.005
0.13 0.500 0.005
5°
45°
5°
0.13 0.270 0.005
0.13 0.030 0.005
0.13 0.385 0.005
0.25 0.750 0.010
0.13 0.165 0.005
0.13 0.125 0.005
0.13 0.060R 0.005
0.13 0.065R 0.005
0.13 0.650 0.005
0.13 0.900 0.005
0.02 0.005 0.001
0.64 0.250 0.025
0.13 0.424 0.005
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
290W
BVDSS
Drain – Source Breakdown Voltage *
40V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current
30A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
* Per Side
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Prelim. 9/00