D1203UK Datasheet, PDF (1/2 Pages) Seme LAB – METAL GATE RF SILICON FET

MECHANICAL DATA
A
B
1
2
4
3
M
G
C
D
E
F
HK
PIN 1
PIN 3
SOURCE
SOURCE
IJ
DM
PIN 2 DRAIN
PIN 4 GATE
DIM mm
A 24.76
B 18.42
C
45°
D
6.35
E 3.17 Dia
F
5.71
G 12.7 Dia
H
6.60
I
0.13
J
4.32
K
3.17
M 26.16
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 Dia
0.225
0.500 Dia
0.260
0.005
0.170
0.125
1.03
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
TetraFET
D1203UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
30W – 12.5V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C_rss
• USEFUL P_O AT 1GHz
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
117W
BV_DSS
Drain – Source Breakdown Voltage
40V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
15A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
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Prelim. 10/99