D1093UK Datasheet, PDF (1/2 Pages) Seme LAB – METAL GATE RF SILICON FET

MECHANICAL DATA
PIN 1
PIN 3
PIN 5
SOURCE
GATE
SOURCE
SOT 171
PIN 2
PIN 4
PIN 6
SOURCE
DRAIN
SOURCE
TetraFET
D1093UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 28V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
42W
BV_DSS
Drain – Source Breakdown Voltage *
65V
BV_GSS
Gate – Source Breakdown Voltage *
±20V
I_D(sat)
Drain Current *
4A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 1/96