D1083UK Datasheet, PDF (1/2 Pages) Seme LAB – METAL GATE RF SILICON FET

SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
4
TO–263 PACKAGE
PIN 1 – GATE
PIN 2 – DRAIN
PIN 3 – SOURCE
PIN 4 – DRAIN
TetraFET
D1083UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
4W – 28V – 200MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
• LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13dB MINIMUM
• SURFACE MOUNT
APPLICATIONS
• LOW COST DC to 200 MHz
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise stated)
P_D
Power Dissipation
62.5W
BV_DSS
Drain – Source Breakdown Voltage
70V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
5A
T_STG
Storage Temperature
–65 to 125°C
T_J
Maximum Operating Junction Temperature
150°C
Semelab plc. Telephone [phone]. Fax [phone]. Email [e-mail]
Prelim. 7/96