D1053UK Datasheet, PDF (1/2 Pages) Seme LAB – METAL GATE RF SILICON FET

TetraFET
D1053UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B
B
A
A
DE
(2
C
pls)
2
3
4
5
1
98 76
K
O
(2 pls)
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
50W – 28V – 1GHz
PUSH–PULL
F
G
PIN 1
PIN 3
PIN 5
PIN 7
PIN 9
HJ
I
DB
SOURCE (COMMON)
DRAIN 2
DRAIN 4
GATE 3
GATE 1
PIN 2
PIN 4
PIN 6
PIN 8
MN
DRAIN 1
DRAIN 3
GATE 4
GATE 2
DIM mm
A
1.52
B
1.52
C
45°
D 16.38
E
6.35
F 18.41
G 12.70
H
5.08
I
24.76
J
1.52
K 0.81R
M
0.13
N
2.16
O 1.65R
Tol. Inches Tol.
0.13 0.060 0.005
0.13 0.060 0.005
5°
45°
5°
0.26 0.645 0.010
0.13 0.250 0.005
0.13 0.725 0.005
0.26 0.500 0.010
0.13 0.200 0.005
0.13 0.975 0.005
0.13 0.060 0.005
0.13 0.032R 0.005
0.02 0.005 0.001
0.13 0.085 0.005
0.13 0.065R 0.005
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 7.5 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from 400 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
175W
BV_DSS
Drain – Source Breakdown Voltage
70V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
5A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 3/95