D1040UK Datasheet, PDF (1/5 Pages) Seme LAB – METAL GATE RF SILICON FET

TetraFET
D1040UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
(2 pls)
1
HD
B
2
3
5
4
E
(4 pls)
F
I
G
(typ)
P
(2 pls) A
PIN 1
PIN 3
PIN 5
NM
O
DR
SOURCE (COMMON)
DRAIN 2
GATE 1
JK
PIN 2
PIN 4
DRAIN 1
GATE 2
DIM Millimetres Tol.
A 19.05 0.50
B 10.77 0.13
C
45°
5°
D
9.78
0.13
E
5.71
0.13
F 27.94 0.13
G 1.52R 0.13
H 10.16 0.13
I
22.22 MAX
J
0.13
0.02
K
2.72
0.13
M
1.70
0.13
N
5.08
0.50
O 34.03 0.13
P 1.61R 0.08
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.064R
Tol.
0.020
0.005
5°
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
400W – 28V – 108MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
• VHF FM COMMUNICATIONS
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
438W
BV_DSS
BV_GSS
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
70V
±20V
I_D(sat)
Drain Current *
35A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
* Per Side
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Document Number 5460
Issue 3