D1036UK Datasheet, PDF (1/2 Pages) Seme LAB – ROHS COMPLIANT METAL GATE RF SILICON FET

TetraFET
D1036UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A
B
1
2
4
3
M
G
C
D
E
F
HK
PIN 1
PIN 3
SOURCE
SOURCE
DM
PIN 2
PIN 4
IJ
DRAIN
GATE
DIM mm
A 24.76
B 18.42
C
45°
D
6.35
E 3.17 Dia.
F
5.71
G 12.7 Dia.
H
6.60
I
0.13
J
4.32
K
3.17
M 26.16
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 Dia.
0.225
0.500 Dia.
0.260
0.005
0.170
0.125
1.03
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
100W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
175W
BV_DSS
Drain – Source Breakdown Voltage
70V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
25A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
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Document Number 6989
Issue 1