D1027UK Datasheet, PDF (1/6 Pages) Seme LAB – METAL GATE RF SILICON FET

TetraFET
D1027UK
MECHANICAL DATA
C
(2 pls)
1
HD
B
2
3
5
4
E
(4 pls)
F
I
G
(typ)
P
(2 pls) A
PIN 1
PIN 3
PIN 5
NM
O
DR
SOURCE (COMMON)
DRAIN 2
GATE 1
JK
PIN 2
PIN 4
DRAIN 1
GATE 2
DIM Millimetres Tol.
A 19.05 0.50
B 10.77 0.13
C
45°
5°
D
9.78
0.13
E
5.71
0.13
F 27.94 0.13
G 1.52R 0.13
H 10.16 0.13
I
22.22 MAX
J
0.13
0.02
K
2.72
0.13
M
1.70
0.13
N
5.08
0.50
O 34.03 0.13
P 1.57R 0.08
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.062R
Tol.
0.020
0.005
5°
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
150W – 28V – 175MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
438W
BV_DSS
Drain – Source Breakdown Voltage
70V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
30A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
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Prelim. 2/00