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D1021UK Datasheet, PDF (1/5 Pages) Seme LAB – METAL GATE RF SILICON FET
TetraFET
D1021UK
MECHANICAL DATA
B
(2 pls)
E
A
C2
3
1
5
4
G (4 pls)
F
K
D
PIN 1
PIN 3
PIN 5
HJ
I
DK
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
PIN 4
MN
DRAIN 1
GATE 2
DIM mm
A
6.45
B 1.65R
C
45°
D 16.51
E
6.47
F 18.41
G
1.52
H
4.82
I
24.76
J
1.52
K 0.81R
M
0.13
N
2.16
Tol. Inches Tol.
0.13 0.254 0.005
0.13 0.065R 0.005
5°
45°
5°
0.76 0.650 0.03
0.13 0.255 0.005
0.13 0.725 0.005
0.13 0.060 0.005
0.25 0.190 0.010
0.13 0.975 0.005
0.13 0.060 0.005
0.13 0.032R 0.005
0.02 0.005 0.001
0.13 0.085 0.005
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
125W – 28V – 400MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 400 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
350W
BVDSS
Drain – Source Breakdown Voltage *
70V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
20A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
* Per Side
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Prelim. 11/00