D1019UK Datasheet, PDF (1/4 Pages) Seme LAB – METAL GATE RF SILICON FET

MECHANICAL DATA
C
1
2
4
A
3
B
D
PIN 1
PIN 3
DRAIN
GATE
PIN 2
PIN 4
SOURCE
SOURCE
DIM mm
A 26.16
B
5.72
C
45°
D
7.11
E
0.13
F
1.52
G
0.43
H
7.67
Tol.
0.13
0.13
5°
0.13
0.02
0.13
0.20
REF
Inches
1.030
0.225
45°
0.280
0.005
0.55
0.060
0.120
Tol.
0.015
0.005
5°
0.005
0.001
0.005
0.008
REF
TetraFET
D1019UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C_rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
P_D
Power Dissipation
50W
BV_DSS
Drain – Source Breakdown Voltage
70V
BV_GSS
Gate – Source Breakdown Voltage
±20V
I_D(sat)
Drain Current
5A
T_stg
Storage Temperature
–65 to 150°C
T_j
Maximum Operating Junction Temperature
200°C
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