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BZX55C Datasheet, PDF (1/2 Pages) Vishay Siliconix – Silicon Epitaxial Planar Z-Diodes
BZX55C Series
MECHANICAL DATA
Dimensions in mm(inches)
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
rad.
3
2
1
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
0.31
(0.012)
rad.
A = 1.02 ± 0.10
(0.04 ± 0.004)
SOT23 CERAMIC
(LCC1 PACKAGE)
A
1.40
(0.055)
max.
Pad 1 – Anode
Underside View
Pad 2 – N/C
Pad 3 – Cathode
VOLTAGE REGULATOR
DIODE IN A
CERAMIC SURFACE MOUNT
PACKAGE
FOR HI–REL APPLICATIONS
FEATURES
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
• VOLTAGE RANGE 2.4 TO 75V
ABSOLUTE MAXIMUM RATINGS
PTOT
Power Dissipation
Derate above 25°C
TMB = 25°C
TOP
TSTG
TSOL
RθJA
RθJ–MB
Maximum Operating Ambient Temperature
Storage Temperature Range
Soldering Temperature
(5 seconds max.)
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Mounting Base
500mW
4mW/°C
–55 to +150°C
–65 to +175°C
260°C
336°C/W
140°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
VZ Zener Voltage
For VZ nom. ≤ 36V, IZ = 5mA
For VZ nom. ≥ 39V, IZ = 2.5mA
VZ min.
IR Reverse Current
VR = VR test
VR = VR test
TAMB = 150°C
ZZ Small Signal Breakdown Impedance IZ = IZ test
ZZ Small Signal Breakdown Impedance For VZ nom. ≤ 36V, IZK = 1mA
near breakdown knee
For VZ nom. ≥ 39V, IZK = 0.5mA
Typ.
VZ nom.
Max. Units
VZ max. V
IR max. µA
IR max(2)
ZZ max. Ω
ZK max. Ω
See table 1 for type variants and test parameters.
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95