BUZ900P Datasheet, PDF (1/4 Pages) Seme LAB – N–CHANNEL POWER MOSFET

MAGNA
TEC
BUZ900P
BUZ901P
MECHANICAL DATA
Dimensions in mm (inches)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
N–CHANNEL
POWER MOSFET
POWER MOSFETS FOR
AUDIO APPLICATIONS
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
123
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
1.01 (0.040)
1.40 (0.055)
2.21 (0.087)
2.59 (0.102)
Pin 1 – Gate
TO–247
Pin 2 – Source
5.25 (0.215)
BSC
Pin 3 – Drain
FEATURES
• HIGH SPEED SWITCHING
• N–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• P–CHANNEL ALSO AVAILABLE AS
BUZ905P & BUZ906P
ABSOLUTE MAXIMUM RATINGS
(T_case = 25°C unless otherwise stated)
V_DSX
Drain – Source Voltage
V_GSS
Gate – Source Voltage
I_D
Continuous Drain Current
I_D(PK)
Body Drain Diode
P_D
Total Power Dissipation
@ T_case = 25°C
T_stg
Storage Temperature Range
T_j
Maximum Operating Junction Temperature
R_θJC
Thermal Resistance Junction – Case
BUZ900P
160V
BUZ901P
200V
±14V
8A
8A
125W
–55 to 150°C
150°C
1.0°C/W
Magnatec. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 10/94