BUY82 Datasheet, PDF (1/2 Pages) Seme LAB – NPN SILICON PLANAR EPITAXIAL TRANSISTOR IN HERMETICALLY SEALED METAL CASE

BUY82
MECHANICAL DATA
Dimensions in mm(Inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
NPN SILICON PLANAR EPITAXIAL
TRANSISTOR IN HERMETICALLY
SEALED METAL CASE
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
1
3
2.54
(0.100)
45°
TO39 PACKAGE(TO205AD)
Pin 1 = Emitter
Pin 2 = Base Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO Maximum Collector to Base Continuous Voltage
150V
V_CEO Maximum Collector to Emitter Continous voltage
60V
V_EBO Maximum Emitter to Base Continouse reverse Voltage
7V
I_C
Maximum Continuous Collector Current
10A
I_B
Maximum Continuous Base Current
2A
P_TOT Maximum total Power Dissipation up to T_case = 25°C
30W
T_case= 100°C
15W
T_amb = 25°C
1W
T_c
Junction Temperature
-65 to +175°C
T_stg Storage Temperature
150°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 3298
Issue 1