BUX82 Datasheet, PDF (1/2 Pages) Seme LAB – HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR

BUX82
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
HIGH CURRENT
HIGH SPEED
HIGH POWER
SILICON NPN PLANAR
TRANSISTOR
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO–204AA (TO–3)
PIN 1 — Base
PIN 2 — Emitter Case is Collector.
Applications
The BUX82 is an epitaxial silicon NPN planar
transistor that has high current and high power
handling capability and high switching speed.
This device is especially suitable for
switching–control amplifiers, power gates, switch-
ing regulators, power-switching circuits convert-
ers, inverters and control circuits.Other recom-
mended applications include DC–RF amplifiers
and power oscillators.
ABSOLUTE MAXIMUM RATINGS (T_j = 25°C unless otherwise stated)
V_CESM
V_CER
Collector – Emitter Voltage
Collector – Emitter Voltage
V_BE = 0
W R_BE = 100
V_CEO
Collector – Emitter Voltage(open base)
I_C
Collector Current (d.c)
I_CM
Peak Collector Current
t_p = 2ms
I_B
Base Current (d.c)
P_tot
Total Power Dissipation T_mb = 50°C
T_STG
Storage Temperature Range
T_J
Maximum Junction Temperature
800V
500V
400V
6A
8A
2A
60W
-65 to +150°C
+150°C
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