BUX81 Datasheet, PDF (1/2 Pages) Seme LAB – HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR

BUX81
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
HIGH CURRENT
HIGH SPEED
HIGH POWER
SILICON NPN PLANAR
TRANSISTOR
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
Applications
The BUX81 is an epitaxial silicon NPN planar transistor that
has high current and high power handling capability and
high switching speed.
This device is especially suitable for switching–control
amplifiers, power gates, switching regulators, power-switch-
ing circuits converters, inverters and control circuits.Other
recommended applications include DC–RF amplifiers and
power oscillators.
TO–204AA (TO–3)
PIN 1 — Base PIN 2 — Emitter Case is Collector.
ABSOLUTE MAXIMUM RATINGS (T_j = 25°C unless otherwise stated)
V_CESM Collector – Emitter Voltage
V_BE = 0
V_CER
Collector – Emitter Voltage
R_BE = 100Ω
V_CEO
Collector – Emitter Voltage(open base)
I_C
Collector Current (d.c)
I_CM
Peak Collector Current
t_p = 2ms
I_B
Base Current (d.c)
P_tot
Total Power Dissipation T_mb = 50°C
T_STG
Storage Temperature Range
T_J
Maximum Junction Temperature
1000V
500V
450V
10A
15A
4A
150W
-65 to +200°C
+200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 5865
Issue 1