BUX80 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,400V,100W)

BUX80
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
HIGH CURRENT
HIGH SPEED
HIGH POWER
SILICON NPN PLANAR
TRANSISTOR
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
Applications
The BUX80 is an epitaxial silicon NPN planar transistor that
has high current and high power handling capability and
high switching speed.
This device is especially suitable for switching–control
amplifiers, power gates, switching regulators, power-switch-
ing circuits converters, inverters and control circuits.
TO–204AA (TO–3)
PIN 1 — Base PIN 2 — Emitter Case is Collector.
ABSOLUTE MAXIMUM RATINGS (T_j = 25°C unless otherwise stated)
V_CES
V_CER
V_CEO
V_EBO
I_C
I_CM
I_B
P_tot
T_STG
T_J
Collector – Emitter Voltage
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
Peak Collector Current
Base Current
Total Power Dissipation T_case = 40°C
Storage Temperature Range
Maximum Junction Temperature
V_BE = 0
R_BE = 50Ω
I_{B = 0}
I_{C = 0}
800V
500V
400V
10V
10A
15A
5A
100W
-65 to +150°C
+150°C
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 6049
Issue 1