BUX47 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE POWER SWITCH

BUX47
MECHANICAL DATA
Dimensions in mm
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
NPN SILICON
POWER TRANSISTOR
FEATURES
• Fast Turn-Off Time
• Hermetic Package
Applications
The BUX47 transistor is designed for high
voltage, high speed, power switching in
inductive circuits where fall time is critical. It is
particularily well suited for line operated switch
mode applications.
TO–204AA (TO–3)
PIN 1 — Base
PIN 2 — Emitter Case is Collector.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CER
Collector – Base Voltage
(R_BE = 10Ω)
850V
V_CES
Collector – Emitter Sustaining Voltage
(V_BE = 0)
850V
V_CEO
Collector – Emitter Voltage
(I_B = 0)
400V
V_EBO
Emitter – Base Voltage
(I_C = 0)
7V
I_C
Collector Current
9A
I_CM
Peak Collector Current
t_p = <5ms
15A
I_B
Base Current
8A
P_tot
Total Power Dissipation
125W
Derate above 25°C
0.83°C / W
T_STG
T_J
Storage Temperature Range
Maximum Junction Temperature
–65 to +175°C
+175°C
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 5516
Issue 1