BUX39 Datasheet, PDF (1/2 Pages) Seme LAB – HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR

SEME
BUX39
LAB
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1
2
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
HIGH CURRENT
HIGH SPEED
HIGH POWER
SILICON NPN PLANAR
TRANSISTOR
FEATURES
m • Fast Turn-On Time – 1 s @ I_C = 15A
• High Current Capability
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO–204AA (TO–3)
PIN 1 — Base
PIN 2 — Emitter
Case is Collector.
Applications
The BUX39 is an epitaxial silicon NPN planar
transistor that has high current and high power han-
dling capability and high switching speed.
This device is especially suitable for switching–control
amplifiers, power gates, switching regulators, power-
switching circuits converters, inverters and control cir-
cuits.Other recommended applications include
DC–RF amplifiers and power oscillators.
The BUX39 is in SEMELAB’s maintenance series
and is NOT recommended for new designs.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
120V
V_CEX
V_CER
Collector – Emitter Sustaining Voltage
Collector – Emitter Voltage
@ V_BE = –1.5V
W @ R_BE = 100
120V
110V
V_CEO(sus) Collector – Emitter Sustaining Voltage
90V
V_EBO
Emitter – Base Voltage
7V
I_C
Collector Current
30A
I_CM
Peak Collector Current
40A
I_B
Base Current
6A
P_tot
Total Power Dissipation
120W
Derate above 25°C
0.68 W / °C
T_stg, T_j
T_L
Maximum Junction and Storage Temperature Range
³ Lead Temperature ¹/₃₂ inch (0.8 mm) for 10 sec. max.
–65 to 100°C
230°C
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
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