BUX11 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUX11
• High Current Capability.
• Hermetic TO3 Metal package.
• Designed For Switching and Linear Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
250V
VCEX
Collector – Emitter Voltage ^{VBE = -1.5V}
250V
VCEO
Collector – Emitter Voltage
200V
VEBO
Emitter – Base Voltage
7V
IC
Continuous Collector Current
20A
ICM
Peak Collector Current
tp = 10ms
25A
IB
Base Current
4A
PD
Total Power Dissipation at ^{TC = 25°C}
110W
Derate Above 25°C
0.63W/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units
1.59 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
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Document Number 8171
Website: http://www.semelab-tt.com
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