BUV28 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,200V,80W)

BUV28
MECHANICAL DATA
Dimensions in mm(inches)
10.2
4 .5
1.3
NPN SWITCHING
TRANSISTOR
3.6 Dia.
123
1.3
0 .8 5
0 .5
2.54 2.54
TO–220
PIN 1 — Base PIN 2 — Collector PIN 3 — Emitter
FEATURES
• LOW SATURATION VOLTAGE
• FAST SWITCHING
• HIGH RELIABILITY
APPLICATIONS
• Switching Regulators
• Solenoid / Relay Drives
DESCRIPTION
High speed transistor suited for low
voltage applications.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage (I_E = 0)
V_CEO
Collector – Emitter Voltage (I_B = 0)
V_EBO
Emitter – Base Voltage (I_C = 0)
I_C
Collector Current
I_CM
Peak Collector Current (t_p ≤ 5 ms)
I_B
Base Current
P_tot
Total Power Dissipation at T_case ≤ 25°C
T_stg,
Storage Temperature
T_j
Junction Temperature
400V
200V
7V
10A
15A
2A
85W
–65 to +175°C
+175°C
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 5923
Issue 1