BUR52 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH CURRENT NPN SILICON TRANSISTOR

BUR52
MECHANICAL DATA
Dimensions in mm(inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO3 (TO204AE)
Pin 1 = Base Pin 2 = Emitter Case = Collector
HIGH CURRENT
NPN SILICON
TRANSISTOR
FEATURES
• FAST SWITCHING
• HIGH PULSE POWER
APPLICATIONS
• POWER SWITCHING CIRCUITS
• MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage (I_E= 0V)
V_CEO
Collector – Emitter Voltage (I_B= 0V)
V_EBO
Collector – Emitter Voltage (I_C= 0V)
I_C
Collector Current
I_CM
Peak Collector Current (t_p = 10 ms)
I_B
Base Current
P_tot
Total Power Dissipation at T_case ≤ 25°C
T_stg,
Storage Temperature
T_j
Max. Operating Junction Temperature
R_θJC
Junction to Case Thermal Resistance
350V
250V
10V
60A
80A
16A
350W
-65°C to +200°C
200°C
0.5°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 5764
Issue 3