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BUP53_09 Datasheet, PDF (1/3 Pages) Seme LAB – SILICON MULTI-EPITAXIAL NPN TRANSISTOR
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUP53
• Low VCE(SAT), Fast switching.
• Hermetic TO3 Metal package.
• Ideally suited for Motor Control, Switching
and Linear Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCEX
Collector – Emitter Voltage VBE = -1.5V
400V
VCEO
Collector – Emitter Voltage
250V
VEBO
Emitter – Base Voltage
10V
IC
Continuous Collector Current
60A
ICM
Peak Collector Current
80A
PD
Total Power Dissipation at TC = 25°C
300W
Derate Above 25°C
1.72W/°C
TJ
Junction Temperature Range
-55 to +200°C
Tstg
Storage Temperature Range
-55 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units
0.58 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8314
Website: http://www.semelab-tt.com
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