BUL72B-LCC4 Datasheet, PDF (1/2 Pages) Seme LAB – ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

SEME
LAB
BUL72B - LCC4
MECHANICAL DATA
Dimensions in mm
1.27 (0.050)
1.07 (0.040)
11
7.62 (0.300) ¹⁰
7.12 (0.280)
9
8
9.14 (0.360)
8.64 (0.340)
12 13 14 15 16
1.39 (0.055)
1.02 (0.040)
17
18
1
2
0.76 (0.030)
0.51 (0.020)
76543
1.39 (0.055)
1.15 (0.045)
1.65 (0.065)
1.40 (0.055)
0.33
0.08
(0.013)
(0.003)
Rad.
0.43
0.18
(0.017)
(0.007
Rad.
≈ 2.16 (0.085)
LCC4
TRANSISTOR
BASE
COLLECTOR
EMITTER
PINS
4,5
1,2,15,16,17,18
6,7,8,9,10,11,12,13
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch
to batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage(I_E=0)
200V
V_CEO
Collector – Emitter Voltage (I_B = 0)
100V
V_EBO
Emitter – Base Voltage (I_C = 0)
10V
I_C
Continuous Collector Current
8A
I_C(PK)
Peak Collector Current
12A
I_B
Base Current
2A
P_tot
Total Dissipation at T_case = 25°C
5W
R_qj-c
Thermal Resistance Junction to Case
25°C/W
T_stg
Operating and Storage Temperature Range
–55 to +150°C
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 6/00