BUL70A Datasheet, PDF (1/2 Pages) Seme LAB – ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

SEME
LAB
MECHANICAL DATA
Dimensions in mm
0.32
0.24
16°
max.
0.10
0.02
13°
1.70
max.
10°
max.
6.7
6.3
3.1
2.9
4
3.7 7.3
3.3 6.7
123
1.05
0.80
0.85
2.30
0.60
4.60
SOT-223
Pin 1 - Base
Pin 2 - Collector
Pin 3 - Emitter
Pin 4 - Collector
BUL70A
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
Designed for use in
electronic ballast applications
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
• SURFACE MOUNT FOOT PRINT
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage(I_E=0)
1000V
V_CEO
Collector – Emitter Voltage (I_B = 0)
500V
V_EBO
Emitter – Base Voltage (I_C = 0)
10V
I_C
Continuous Collector Current
4A
I_C(PK)
Peak Collector Current
7A
I_B
Base Current
2A
P_tot
Total Dissipation at T_case = 25°C
3W
T_stg
Operating and Storage Temperature Range
–55 to +150°C
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 2/97