BUL58BSMD Datasheet, PDF (1/2 Pages) Seme LAB – ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

BUL58BSMD
MECHANICAL DATA
Dimensions in mm
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) ^{m in .} 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
3 .6 0 (0 .1 4 2 )
M ax.
1
3
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
2
FEATURES
• Multi–base for efficient energy distribution
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
SMD1 PACKAGE
batch.
Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter ^{• Triple Guard Rings for improved control of}
high voltages.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
V_CEO
V_EBO
I_C
I_C(PK)
I_B
P_tot
Collector – Base Voltage
Collector – Emitter Voltage (I_B = 0)
Emitter – Base Voltage (I_C = 0)
Collector Current
Peak Collector Current
Base Current
Total Dissipation at T_case = 25°C
Derate above 25°C when used on efficient heatsink
180V
90V
10V
7A
10A
2A
50W
0.28W/°C
T_stg
Operating and Storage Temperature Range
–65 to 200°C
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 7/00