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BUL56B Datasheet, PDF (1/2 Pages) Seme LAB – ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |||
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SEME
LAB
BUL56B
MECHANICAL DATA
Dimensions in mm
10.2
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
4 .5
1.3
HIGH SPEED NPN
SILICON POWER TRANSISTOR
3.6 Dia.
123
1.3
0 .8 5
Designed for use in
electronic ballast applications
⢠SEMEFAB DESIGNED AND DIFFUSED DIE
⢠HIGH VOLTAGE
⢠FAST SWITCHING
⢠HIGH ENERGY RATING
2.54 2.54
Pin 1 â Base
TO220
Pad 2 â Collector
0 .5
Pad 3 â Emitter
FEATURES
⢠Multiâbase for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
⢠Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
⢠Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector â Base Voltage(IE=0)
250V
VCEO
Collector â Emitter Voltage (IB = 0)
100V
VEBO
Emitter â Base Voltage (IC = 0)
10V
IC
Continuous Collector Current
18A
IC(PK)
Peak Collector Current
25A
IB
Base Current
5A
Ptot
Total Dissipation at Tcase = 25°C
85W
Tstg
Operating and Storage Temperature Range
â55 to +150°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
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