BUL54ASMD Datasheet, PDF (1/2 Pages) Seme LAB – ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

BUL54ASMD
MECHANICAL DATA
Dimensions in mm
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) ^{m in .} 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
1
3
2
3 .6 0 (0 .1 4 2 )
M ax.
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING (t_f = 40ns)
• EXCEPTIONAL HIGH TEMPERATURE
PERFORMANCE
• HIGH ENERGY RATING
• EFFICIENT POWER SWITCHING
• MILITARY AND HI–REL OPTIONS
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
Pad 1 – Base
SMD1 Package
Pad 2 – Collector
FEATURES
0 .5 0 (0 .0 2 0 )
0 . 2 6 ( 0 . 0 1 0 ) _{• Multi–base design for efficient energy}
distribution across the chip resulting in
significantly improved switching and energy
ratings across full temperature range.
Pad 3 – Emitter _{• Ion implant and high accuracy masking for}
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
1000V
V_CEO
Collector – Emitter Voltage (I_B = 0)
500V
V_EBO
Emitter – Base Voltage
10V
I_C
Collector Current
2A
I_C(PK)
Peak Collector Current
4A
I_B
Base Current
0.8A
P_tot
Total Dissipation at T_case = 25°C
35W
Derate above 25°C when used on efficient heatsink
0.2W/°C
T_stg
Operating and Storage Temperature Range
R_th
Thermal Resistance Junction – Case
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
–65 to 200°C
3.5°C/W
Prelim. 7/00