BUL54A-TO5 Datasheet, PDF (1/3 Pages) Seme LAB – SILICON POWER NPN TRANSISTOR

SILICON POWER
NPN TRANSISTOR
BUL54A-TO5
• Advanced Distributed Base design
• High Voltage
• Fast Switching
• High Energy Rating
• Screening Options Available
Features:
•
•
•
Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and
energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage (I_E = 0)
1000V
VCEO
Collector – Emitter Voltage (I_B = 0)
500V
VEBO
Emitter – Base Voltage (I_c = 0)
10V
IC
Continuous Collector Current
4A
PTOT
Total Power Dissipation at ^{Tc = 25°C}
20W
TJ
Operating Junction Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-55 to +150°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
Max
6.25
Units
°C/W
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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