BUL53BSMD Datasheet, PDF (1/2 Pages) Seme LAB – ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR

BUL53BSMD
MECHANICAL DATA
Dimensions in mm
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) ^{m in .} 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
1
3
2
3 .6 0 (0 .1 4 2 )
M ax.
ADVANCED DISTRIBUTED
BASE DESIGN
HIGH VOLTAGE, HIGH SPEED NPN
SILICON POWER TRANSISTOR
• CERAMIC SURFACE MOUNT PACKAGE
• FULL MIL/AEROSPACE TEMPERATURE
RANGE
• SCREENING OPTIONS FOR MILITARY AND
SPACE APPLICATIONS
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE (V_CBO = 800V)
• FAST SWITCHING (t_f = 100ns)
• HIGH ENERGY RATING
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
Pad 1 – Base
SMD1
Pad 2 – Collector
FEATURES
0 .5 0 (0 .0 2 0 )
0 . 2 6 ( 0 . 0 1 0 ) _{• Multi-Base design for efficient energy}
distribution across the chip.
Pad 3 – Emitter
• SIgnificantly improved switching and energy
ratings across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple guard rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
500V
V_CEO
Collector – Emitter Voltage (I_B = 0)
250V
V_EBO
Emitter – Base Voltage (I_C = 0)
10V
I_C
Collector Current
12A
I_C(PK)
Peak Collector Current
20A
I_B
Base Current
3A
P_D
Power Dissipation
60W
R_?
Thermal Impedance (when mounted on thermally conducting PCB)
3.0°C/W
T_j
Maximum Junction Temperature
200°C
T_stg
Storage Temperature Range
–55 to +200°C
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 7/00