BUL52AFI Datasheet, PDF (1/4 Pages) Seme LAB – ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

SEME
LAB
BUL52AFI
MECHANICAL DATA
Dimensions in mm
10.2
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
3.6 Dia.
Designed for use in
electronic ballast applications
123
1.3
0 .8 5
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
2.54 2.54
ISOLATED TO220
Pin 1 – Base Pin 2 – Collectorn Pin3 – Emitter
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
1000V
V_CEO
Collector – Emitter Voltage (I_B = 0)
500V
V_EBO
Emitter – Base Voltage (I_C = 0)
10V
I_C
Continuous Collector Current
6A
I_C(PK)
Peak Collector Current
10A
I_B
Base Current
2.5A
P_tot
Total Dissipation at T_case = 25°C
45W
T_stg
Operating and Storage Temperature Range
–55 to 150°C
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 3/97