BUL49A Datasheet, PDF (1/2 Pages) Seme LAB – ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

BUL49A
MECHANICAL DATA
Dimensions in mm
40.01 (1.575)
Max.
22.23 (0.875)
Max.
1.09 (0.043)
0.97 (0.038)
Dia.
30.40 (1.197)
29.90 (1.177)
2
11.18 (0.440)
10.67 (0.420)
1
26.67
(1.050)
Max.
4.47 (0.176)
Rad.
2 Pls.
11.43 (0.450)
6.35 (0.250)
12.19 (0.48)
1.63 (0.064) _{11.18 (0.44)}
1.52 (0.060)
4.09 (0.161)
3.84 (0.151)
2 Pls
Pin 1 – Base
16.97 (0.668)
16.87 (0.664)
TO3
Pin 2 – Emitter
Case is Collector
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
• EFFICIENT POWER SWITCHING
• MILITARY AND HI–REL OPTIONS
• EXCEPTIONAL HIGH TEMPERATURE
PERFORMANCE
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
600V
V_CEO
Collector – Emitter Voltage (I_B = 0)
300V
V_EBO
Emitter – Base Voltage (I_C = 0)
10V
I_C
Continuous Collector Current
25A
I_C(PK)
Peak Collector Current
40A
P_tot
Total Dissipation at T_case = 25°C
200W
T_stg
Operating and Storage Temperature Range
–65 to 175°C
R_th
Thermal Resistance (junction-case)
Max. 0.7°CW
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 4/99