BUL47A Datasheet, PDF (1/2 Pages) Seme LAB – ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

BUL47A
MECHANICAL DATA
Dimensions in mm
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
Pin 1 – Base
TO3 (TO-204AA)
Pin 2 – Emitter Case is Collector
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
• EFFICIENT POWER SWITCHING
• MILITARY AND HI–REL OPTIONS
• EXCEPTIONAL HIGH TEMPERATURE
PERFORMANCE
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
R_th
Collector – Base Voltage
Collector – Emitter Voltage (I_B = 0)
Emitter – Base Voltage (I_C = 0)
Continuous Collector Current
Total Dissipation at T_case = 25°C
Operating and Storage Temperature Range
Thermal Resistance (junction-case)
600V
300V
10V
40A
200W
–65 to 175°C
0.75°CW
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document 3880
Issue 1