BSV64 Datasheet, PDF (1/2 Pages) Seme LAB – SILICON NPN PLANAR TRANSISTOR

BSV64
MECHANICAL DATA
Dimensions in mm (inches)
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
12.70
(0.500)
min.
0.89 _max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
5.08 (0.200)
typ.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
1
3
2.54
(0.100)
45˚
TO39 PACKAGE
Underside View
Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
SILICON NPN
PLANAR TRANSISTOR
FEATURES
• V_CBO = 100V
• V_CEO = 60V
• I_C = 2A
DESCRIPTION
General Purpose NPN Transistor in a
Hermetic TO39 Package
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
V_CER
Collector – Base Voltage (open emitter)
£ W Collector – Emitter Voltage (R_BE 50 )
100V
80V
V_CEO
Collector – Emitter Voltage (open base)
60V
V_EBO
Emitter – Base Voltage (open collector)
5V
I_C
Collector Current (d.c.)
2A
I_CM
Collector Current (peak value)
5A
I_B
Base Current (d.c.)
1A
P_TOT
Total Device Dissipation @ T_C = 50°C
5W
T_stg,
Storage Temperature
–55 to 175°C
T_j
Junction Temperature
175°C / W
R_thj-c
Thermal Resistance Junction to Case
25°C / W
Semelab plc. Telephone [phone]. Fax [phone].
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Prelim.12/99