BFY90 Datasheet, PDF (1/2 Pages) Seme LAB – SILICON PLANAR EPITAXIAL NPN TRANSISTOR

MECHANICAL DATA
Dimensions in mm (inches)
4.95 (0.195)
4.52 (0.178)
4.95 (0.195)
4.52 (0.178)
BFY90
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
4
3
1
2
TO72
Pin 1 – Emitter
Pin 2 –Base
Pin 3 – Collector
Pin 4 – Connected to Case
DESCRIPTION
The BFY90 is a low noise transistor intended for
use in broad and narrow-band amplifiers up to
1GHz.
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
V_CER
Collector – Emitter Voltage (R_BE £ 50W )
V_CEO
Collector – Emitter Voltage
V_EBO
Emitter – Base Voltage
I_C(AV)
Average Collector Current
I_CM
Peak Collector Current (f ³1MHz)
P_tot
Power Dissipation at T_amb = 25°C
T_j
Storage Temperature
T_stg,
Junction Temperature
30V
30V
15V
2.5v
25mA
50mA
200mW°C
200°C
–65 to +200°C
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Prelim. 12/99