BFX85 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor

BFX85
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
NPN SILICON EPITAXIAL
SWITCHING TRANSISTOR
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
V_CEO = 60V
I_C = 1A
5.08 (0.200)
typ.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
1
3
45°
2.54
(0.100)
APPLICATIONS
• General Purpose Switching and Amplification
• Industrial Applications
• Hermetic Metal Package
• Hi-Rel Screening Options Available
TO39 (TO-205AD)
Underside View
PIN 1 – Emitter PIN 2 – Base PAD 3 – Collector
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
100V
V_CEO
Collector – Emitter Voltage
60V
I_C
Collector Current Continuous
1A
P_tot
Total Power Dissipation T_amb < 25°C
800 mW
T_case < 25°C
5W
T_case < 25°C <100°C
2.86W
T_stg
Storage Temperature
–65 to 150°C
T_j
Operating Junction Temperature
175°C
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Document Number 5808
Issue 1