BFX29 Datasheet, PDF (1/2 Pages) Seme LAB – PNP SILICON EPITAXIAL TRANSISTOR

BFX29
MECHANICAL DATA
Dimensions in mm (inches)
6 .1 0 (0 .2 4 0 )
6 .6 0 (0 .2 6 0 )
8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
PNP SILICON EPITAXIAL
TRANSISTOR
1 2 .7 0
(0 .5 0 0 )
m in .
0 .8 9
(0 .0 3 5
)m
ax.
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .
5 .0 8 (0 .2 0 0 )
ty p .
0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )
2
1
3
2 .5 4
(0 .1 0 0 )
45°
TO39 PACKAGE
Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
APPLICATIONS
• General Purpose Industrial Applications
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
60V
V_CEO
Collector – Emitter Voltage
60V
V_EBO
Emitter – Base Voltage
5V
I_C
Collector Current Continuous
600mA
I_CM
Collector Current Peak
600mA
I_EM
Emitter Current Peak
600mA
P_tot
Total Power Dissipation T_amb < 25°C
600 mW
T_stg
Storage Temperature
–65 to 200°C
T_j
Operating Junction Temperature
200°C
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